[1] Sangmin Ahn, Hyungjun Jo, Sungju Kim, Sechun Park, Kyunam Lim, Jongwoo Kim, and Hyungcheol Shin, “An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory”, IEEE Transactions on Electron Devices (TED), 2023.
[2] Juhyun Kim and Hyungcheol Shin, “Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs”, IEEE Transactions on Electron Devices (TED), 2023.
[3] Jangkyu Lee, Eunseok Oh, and Hyungcheol Shin, “Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning”, IEEE Transactions on Electron Devices (TED), 2023.
[4] Hyungjun Jo, Jongwoo Kim, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, and Hyungcheol Shin, “Investigation of Endurance Characteristics in 3-D nand Flash Memory With Trap Profile Analysis”, IEEE Transactions on Electron Devices (TED), 2024.
[5] Haechan Choi, Jinil Yoo, and Hyungcheol Shin, “A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories”, IEEE Transactions on Electron Devices (TED), 2024.
[6] Jinil Yoo, Hyungjun Jo, and Hyungcheol Shin, “Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations”, IEEE Transactions on Electron Devices (TED), 2024.
[7] Jinil Yoo, Haechan Choi, and Hyungcheol Shin, “A New Semi-Analytical Model for Erase Transients of 3-D Gate-All-Around (GAA) NAND Flash Memories,” IEEE Transactions on Electron Devices (TED), 2024.
[8] Insang Han and Hyungcheol Shin, “Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory”, IEEE Transactions of Electron Devices (TED), 2024.
[9] Jinil Yoo, Sangmin Ahn, and Hyungcheol Shin, “Integra-NANDSim: A New VT Distribution Simulator of 3-D NAND Flash Memories.” IEEE Journal of the Electron Devices Society (JEDS), 2024.
[10] Hyungjun Jo and Hyungcheol Shin, “Compact Modeling of Trap-assisted Tunneling Current in 3-D NAND Flash Memory”, IEEE Transactions of Electron Devices (TED), 2025.
[11] Juhyun Kim and Hyungcheol Shin, “Modeling of Effective Mobility in 3D NAND Flash Memory with Polycrystalline Silicon Channel”, Journal of Computational Electronics, 2025.
