[1] Sangmin Ahn, Hyungjun Jo, Sungju Kim, Sechun Park, Kyunam Lim, Jongwoo Kim, and Hyungcheol Shin, “An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory”, IEEE Transactions on Electron Devices (TED), 2023.
[2] Juhyun Kim and Hyungcheol Shin, “Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs”, IEEE Transactions on Electron Devices (TED), 2023.
[3] Jang Kyu Lee, Eunseok Oh, and Hyungcheol Shin, “Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning”, IEEE Transactions on Electron Devices (TED), 2023.
[4] Hyungjun Jo, Jongwoo Kim, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, and Hyungcheol Shin, “Investigation of Endurance Characteristics in 3-D nand Flash Memory With Trap Profile Analysis”, IEEE Transactions on Electron Devices (TED), 2024.
[5] Haechan Choi, Jinil Yoo, and Hyungcheol Shin, “A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories”, IEEE Transactions on Electron Devices (TED), 2024.
[6] Jinil Yoo, Hyungjun Jo, and Hyungcheol Shin, “Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations”, IEEE Transactions on Electron Devices (TED), 2024.
[7] Insang Han and Hyungcheol Shin, “Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory”, IEEE Transactions of Electron Devices (TED), 2024.
[8] Yoo, Jinil, Sangmin Ahn, and Hyungcheol Shin. “Integra-NANDSim: A New VT Distribution Simulator of 3-D NAND Flash Memories.” IEEE Journal of the Electron Devices Society (2024).
