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INTEGRA Semiconductor, Ltd.INTEGRA Semiconductor, Ltd.INTEGRA Semiconductor, Ltd.

  • About Us
    • Our History
    • Publications
  • NAND-SIMULATOR
  • NAND-MODEL
  • Education
    • Semiconductor Lecture
      • Semiconductor Devices
      • Fundamentals of Nano-scale Device
      • Semiconductor Device Engineering
      • Introduction to Solid State Electronics
    • NAND Flash Short Seminar
    • Books
  • CONTACT US
  • LICENSES
    • License Management (For Admin)
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    • × PlaceholderModeling of Grain Boundary Barrier Height for Macaroni MOSFETs with Un-doped Polycrystalline Silicon, Juhyun Kim (with pdf file) 1 × ₩24,200
    • × PlaceholderAn Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn (with pdf file) 1 × ₩24,200
    • × PlaceholderNAND Flash Short Seminar All Lectures 1 × ₩110,000
    • × PlaceholderA New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file) 1 × ₩24,200

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  • Han, Insang (한인상) – Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory

Han, Insang (한인상) – Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory

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