3D NAND Flash Related Journal/Conference Paper Briefing Seminar
♦ Integra provides summaries of journal and conference papers related to 3D NAND Flash memory, with online videos directly presented by the authors themselves.
♦ It will be helpful for researchers, engineers, and students on 3D NAND Flash memory device technology.
♦ Material: Journal or conference paper with the same title as the video.
All payments will be made via bank transfer (무통장입금), and the administrator’s approval will be processed after the deposit.
Single lecture – 22,000KRW (VAT included) / Single lecture + pdf file (+10% charge) – 24,200 KRW (VAT included)
– Modeling of Grain Boundary Barrier Height for Macaroni MOSFETs with Un-doped Polycrystalline Silicon, Juhyun Kim (김주현), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn (안상민), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning, Jankyu Lee (이장규), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (최해찬) and Jinil Yoo (유진일), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Time Constant Analysis of Lateral Charge Loss in 3D NAND through Multiscale Simulations, Jinil Yoo (유진일), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Investigation of Endurance Characteristics in 3D NAND Flash Memory with Trap Profile Analysis, Hyungjun Jo (조형준), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– A New Semi-Analytical Model for Erase Transients of 3D GAA NAND Flash Memories, Jinil Yoo (유진일), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory, Insang Han (한인상), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Compact Modeling of Trap-assisted Tunneling Current in 3-D NAND Flash Memory, Hyungjun Jo (조형준), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Investigation of Random Telegraph Noise Scaling Dependency in 3D NAND Using Monte Carlo Simulator, Eunseok Oh (오은석), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Investigation of Cell Variation Effect on Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn (안상민), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs, Juhyun Kim (김주현), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– FeVNAND Reserach Summary, Ilho Myung (명일호), IEEE EDL
single lecture (click here) / single lecture with pdf file (click here)
Full course:
Full lecture course access available – 110,000 KRW (VAT included)
Full lecture course access available with pdf files – 121,000 KRW (VAT included)