3D NAND Flash Related Journal/Conference Paper Briefing Seminar
♦ Integra provides summaries of journal and conference papers related to 3D NAND Flash memory, with online videos directly presented by the authors themselves.
♦ It will be helpful for researchers, engineers, and students on 3D NAND Flash memory device technology.
♦ Material: Journal or conference paper with the same title as the video.
♦ If you would like to watch the video lecture, please contact me by email. (integrasemi@gmail.com)
– Modeling of Grain Boundary Barrier Height for Macaroni MOSFETs with Un-doped Polycrystalline Silicon, Juhyun Kim (김주현), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn (안상민), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning, Jankyu Lee (이장규), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (최해찬) and Jinil Yoo (유진일), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Time Constant Analysis of Lateral Charge Loss in 3D NAND through Multiscale Simulations, Jinil Yoo (유진일), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Investigation of Endurance Characteristics in 3D NAND Flash Memory with Trap Profile Analysis, Hyungjun Jo (조형준), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– A New Semi-Analytical Model for Erase Transients of 3D GAA NAND Flash Memories, Jinil Yoo (유진일), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory, Insang Han (한인상), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Compact Modeling of Trap-assisted Tunneling Current in 3-D NAND Flash Memory, Hyungjun Jo (조형준), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Investigation of Random Telegraph Noise Scaling Dependency in 3D NAND Using Monte Carlo Simulator, Eunseok Oh (오은석), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Investigation of Cell Variation Effect on Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn (안상민), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs, Juhyun Kim (김주현), IEEE TED
single lecture (click here) / single lecture with pdf file (click here)
– FeVNAND Reserach Summary, Ilho Myung (명일호), IEEE EDL
single lecture (click here) / single lecture with pdf file (click here)
Full course:
Full lecture course access available
Full lecture course access available with pdf files