Program operation is done by giving certain bias to target 3D NAND Flash memory cells. This results the electrons to be trapped in NAND Flash memory cells and stores data in the device.
Program
Erase
Erase operation is done by filling up total 3D NAND Flash memory cell site with hole carriers. The operation is done by giving high voltage to bit line and source line, with 0V bias to word lines. Hole carriers are generated by GIDL.
Read
Read operation verifies the threshold voltage of the target cell. A precise read model is needed as multi-level cells are developed. For an accurate read model, the grain boundary is the main consideration, as 3D NAND flash memory channels are fabricated with poly-silicon, and this defect causes changes in channel current and potential.