A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file)

₩24,200

Choi, Haechan (최해찬) – A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories (with pdf file)

Category: 미분류

Reviews (0)

Reviews

There are no reviews yet.

Be the first to review “A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file)”

로그인

회원가입

A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file)

Reviews

Related products

Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory, Insang Han (with pdf file)

Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning, Jangkyu Lee (with pdf file)

A New Semi-Analytical Model for Erase Transients of 3D GAA NAND Flash Memories, Jinil Yoo (with pdf file)