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An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn
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Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning, Jangkyu Lee
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22,000
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90,000
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A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi
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“A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi” has been added to your cart.
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An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn
₩
22,000
An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn quantity
₩
22,000
×
Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning, Jangkyu Lee
₩
22,000
Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning, Jangkyu Lee quantity
₩
22,000
×
예시 강좌
₩
90,000
예시 강좌 quantity
₩
90,000
×
A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi
₩
22,000
A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi quantity
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22,000
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156,000
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