장바구니

    Product Price Quantity Total
× Placeholder Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory, Insang Han (with pdf file) 24,200
24,200
× Placeholder A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file) 24,200
24,200
× Placeholder Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory, Insang Han 22,000
22,000

Cart totals

Subtotal 70,400
Total 70,400