NAND Flash Short Seminar Single Lecture
₩22,000
- Choi, Haechan (최해찬) – A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories
- Kim, JuHyun (김주현) – Modeling of Grain Boundary Barrier Height for Macaroni MOSFETs with Un-doped Polycrystalline Silicon
- Ahn, Sangmin (안상민) – An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Nitride 3D NAND Flash
- Lee, Jangkyu (이장규) – Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning
- Yoo, Jinil (유진일) – Time Constant Analysis of Lateral Charge Loss in 3D NAND through Multiscale Simulations
- Jo, Hyungjun (조형준) – Investigation of Endurance Characteristics in 3D NAND Flash Memory with Trap Profile Analysis
- Yoo, Jinil (유진일) – A New Semi-Analytical Model for Erase Transients of 3D GAA NAND Flash Memories
- Han, Insang (한인상) – Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory
- Jo, Hyungjun (조형준) – Compact Modeling of Trap-assisted Tunneling Current in 3-D NAND Flash Memory
- Oh, Eunseok (오은석) – Investigation of Random Telegraph Noise Scaling Dependency in 3D NAND Using Monte Carlo Simulator
- Ahn, Sangmin (안상민) – Investigation of Cell Variation Effect on Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory
- Kim, Juhyun (김주현) – Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs
Description
This product includes a single lecture of 3D NAND Flash short seminar course.
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