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An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn (with pdf file)
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Modeling of Grain Boundary Barrier Height for Macaroni MOSFETs with Un-doped Polycrystalline Silicon, Juhyun Kim
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“Modeling of Grain Boundary Barrier Height for Macaroni MOSFETs with Un-doped Polycrystalline Silicon, Juhyun Kim” has been added to your cart.
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An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn (with pdf file)
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24,200
An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn (with pdf file) quantity
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24,200
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Modeling of Grain Boundary Barrier Height for Macaroni MOSFETs with Un-doped Polycrystalline Silicon, Juhyun Kim
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22,000
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22,000
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