× |
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A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file) |
₩24,200 |
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₩24,200 |
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Machine Learning-Based Prediction of Threshold Voltage Distribution due to Lateral Migration in 3D NAND Flash Memory, Insang Han (with pdf file) |
₩24,200 |
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₩24,200 |
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Monte Carlo Simulator for Threshold Voltage Distribution of 3-D NAND Flash Memory Using Machine Learning, Jangkyu Lee |
₩22,000 |
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₩22,000 |
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