Retention is about how well 3D NAND flash memory keeps data over time, with a focus on understanding the different ways data can fade due to electron movement and interactions between cells.
Retention
Eudurance
Endurance looks at how repeated use, like writing and erasing data, wears down the memory cells in 3D NAND flash, eventually causing them to degrade and become less reliable.
Interference
Interference involves how electrical signals from nearby memory cells can affect each other, potentially leading to errors in stored data in 3D NAND flash memory.
Disturbance
Disturbance refers to unintended changes in data caused by operations like reading or writing in nearby cells, which can lead to data errors in 3D NAND flash memory.