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- × Investigation of Cell Variation Effect on Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn 1 × ₩22,000
- × A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file) 1 × ₩24,200
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Continue shopping “A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file)” has been added to your cart.

		Product	Price	Quantity	Total
×		Investigation of Cell Variation Effect on Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn	₩22,000	Investigation of Cell Variation Effect on Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory, Sangmin Ahn quantity	₩22,000
×		A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file)	₩24,200	A New Physical Model for Program Transients of Cylindrical Charge-Trap Based NAND Flash Memories, Haechan Choi (with pdf file) quantity	₩24,200
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Subtotal	₩46,200
Total	₩46,200

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